Development of X-Band Transceiver MMIC’s Using GaN Technology

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O. Memioglu
O. Kazan
A. Karakuzulu
I. Turan
A. Gundel
F. Kocer
O. A. Civi

Abstract

This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.

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How to Cite
Memioglu, O., Kazan, O., Karakuzulu, A., Turan, I., Gundel, A., Kocer, F., & Civi, O. A. (2019). Development of X-Band Transceiver MMIC’s Using GaN Technology. Advanced Electromagnetics, 8(2), 1-9. https://doi.org/10.7716/aem.v8i2.1012
Section
Research Articles

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