X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

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Y.-J. Lee
C.-Y. Chang
Y.-H. Chou
I-Y. Tarn
J. Y.-C. Yaung
J.-H. Tarng
S.-J. Chung

Abstract

An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C.

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How to Cite
Lee, Y.-J., Chang, C.-Y., Chou, Y.-H., Tarn, I.-Y., Yaung, J. Y.-C., Tarng, J.-H., & Chung, S.-J. (2018). X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications. Advanced Electromagnetics, 7(5), 124-130. https://doi.org/10.7716/aem.v7i5.917
Section
Research Articles